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- 2023
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Mark
Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts
(
- Contribution to journal › Article
- 2022
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
(
- Contribution to journal › Article
- 2020
-
Mark
Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
(
- Contribution to journal › Article
- 2019
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Mark
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(
- Contribution to journal › Article
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Mark
Core-shell tfet developments and tfet limitations
2019) 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2018
-
Mark
Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth
2018) 4-th International Symposium on DSA, November 11-13, 2018, Sapporo, Japan(
- Contribution to conference › Abstract
-
Mark
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
(
- Contribution to journal › Article
- 2017
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Mark
Increased absorption in InAsSb nanowire clusters through coupled optical modes
(
- Contribution to journal › Article
- 2016
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Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
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Mark
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
(
- Contribution to journal › Article